| PART |
Description |
Maker |
| RM20CA-XXS RM20C1A-XXS RM20DA-XXS |
MEDIUM POWER/ HIGH FREQUENCY USE INSULATED TYPE
MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE 中功率，高频率使用的绝缘
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| BCR20AM BCR20AM-8L |
400 V, 20 A, TRIAC, TO-220
MEDIUM POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE
MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| SKDH116-L75 SKDH116_12-L75 SKDH116_16-L75 SKDH116/ |
三相整流桥IGBT的制动斩波器
MOSFET; ID (A): 0.03; VDS (V): 6; Pch : 0.15; |yfs| (S) typ: 0.029; PG (dB) typ: 22; Ciss (pF) typ: 2.1; NF (dB) typ: 1.75; IDSS (mA): -; Package: MPAK-4
3-Phase Bridge Rectifier IGBT braking chopper
|
Semikron International
|
| RM50C1A-XXS RM50DA-C1A-XXS RM50DA/CA/C1A-XXS RM50C |
FAST RECOVERY DIODE MODULES MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE
Fast Recovery Diode Modules, F Series (for IGBT speed switching)
MEDIUM POWER/ HIGH FREQUENCY USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| S6846 S10053 S6809 |
MOSFET, Switching; VDSS (V): 600; ID (A): 11; Pch : -; RDS (ON) typ. (ohm) @10V: 0.58; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1450; toff (µs) typ: -; Package: LDPAK (S)- (1)
Light modulation photo IC 光调制照片集成电
|
Hamamatsu Photonics
|
| CM10MD-24H |
MEDIUM POWER SWITCHING USE INSULATED TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| TM20DA-H TM20DA-M |
MEDIUM POWER GENERAL USE INSULATED TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| QM30DY-2H QM30 |
MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| TM60SA-6 |
MEDIUM POWER GENERAL USE NON-INSULATED TYPE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| RM100SZ-6S RM100SZ-6R |
MEDIUM POWER GENERAL USE NON-INSULATED TYPE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
